| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film forming device capable of prolonging the life of a gas ion source and reducing the cost of maintenance. SOLUTION: This device is provided with a holding member 3 arranged in a vacuum tank 1 and holding a base material P to be thin film-formed, an accelerating electrode 15 having an opening part confronted with the holding member 3, a reaction gas introducing chamber 11 arranged in the accelerating electrode 15 and having an opening part confronted with the opening part of the accelerating electrode 15, a lower insulating material 16b insulating the space between the accelerating electrode 15 and the reaction gas introducing chamber and fixing the reaction gas introducing chamber 11 to the inside of the accelerating electrode 15, electron generating parts 12 and 13 arranged at the inside of the reaction gas introducing chamber 11, a reaction gas introducing tube 14 jetting gas into the reaction gas introducing chamber 11 and upper and lower sticking preventing covers 17a and 17b covering the lower insulating material 16b.
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