| 摘要 |
An RF microwave mixer comprises a pair of PHEMTs (8) connected in series to RF and IF ports via an impedance transformer (18) and a diplexer filter (16) The gates (G) of the transistors (8) are commoned to a local oscillator (14) which controls the transistor gate-source voltage. The transistor gate-source voltage controls the channel drain-source resistance in the non-saturated or substantially linear operating region of the PHEMTs. The channel resistance of PHEMTs varies as a function of gate-source voltage in a more linear manner than MESFETs implemented in conventional transistor based mixers.
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