| 摘要 |
PROBLEM TO BE SOLVED: To provide both single crystal pulling apparatus and method having a uniform oxygen concentration in the growth axis direction of pulled single crystal, capable of reducing power consumption. SOLUTION: In this semiconductor single crystal pulling apparatus, a heat unit 6 for melting a raw material semiconductor arranged in a furnace main body 2 is constituted of a main heater 6m installed around the circumference of a retaining crucible 4 in which a quartz crucible 5 is housed and a lower heater 6s laid below the retaining heater 4. The lower heater 6s is opposed to the bottom part 5b of the quartz crucible 5 and can be lifted and lowered. This semiconductor single crystal pulling method comprises diminishing a distance between the retaining crucible 4 and the lower heater 6s with the growth of single crystal.
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