发明名称 SINGLE CRYSTAL GROWTH
摘要 PROBLEM TO BE SOLVED: To prevent the deformation of a crucible for holding a raw material melt in pulling up a single crystal by a CZ method. SOLUTION: A cylindrical side heater 2a is arranged around the circumference of a crucible 1 and a disklike bottom heater 2b is installed below the bottom of the crucible 1. The bottom heater 2b is used in a necking process after melting of a crystal raw material in the crucible 1 and a diameter increasing process for forming a shoulder part. The output of the side heater 2a is relatively decreased. In the diameter increasing process, the diameter of single crystal is increased by reducing the output of the bottom heater 2b.
申请公布号 JP2000211991(A) 申请公布日期 2000.08.02
申请号 JP19990017958 申请日期 1999.01.27
申请人 SUMITOMO METAL IND LTD 发明人 FUJIWARA HIDEKI
分类号 H01L21/208;C30B15/22;(IPC1-7):C30B15/22 主分类号 H01L21/208
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