Non-contact tunnelling field measurement for a semiconductor oxide layer
摘要
A corona source is used to repetitively apply charge to an oxide layer on a semiconductor. A Kelvin probe is used to measure the resulting voltage across the layer. The tunneling field is determined based on the value of voltage at which the voltage measurement saturates.
申请公布号
US6097196(A)
申请公布日期
2000.08.01
申请号
US19970841501
申请日期
1997.04.23
申请人
VERKUIL, ROGER L.;HORNER, GREGORY S.;MILLER, TOM G.
发明人
VERKUIL, ROGER L.;HORNER, GREGORY S.;MILLER, TOM G.