METHOD OF MAKING A SELF-ALIGNED CONTACT IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a self-align type contact is provided to decrease the area of the contact part by forming the contact with a self-align system. CONSTITUTION: A gate oxide film(2) is formed on a semiconductor substrate(1). A gate electrode(3) overlapping with an interlayer insulating film is formed on the gate oxide film(2). A source/drain electrode(5) is formed on both sides of the gate electrode(3). An oxide film is formed on the sidewall of the gate electrode(3) and the interlayer insulating film. After forming a nitride film(7) on the whole structure, a silicon spacer(8') is formed on the sidewall of the gate electrode(3) and the interlayer insulating film. A thermal oxide film(9) is formed by oxidizing the silicon spacer(8') thermally. A contact mask is formed on the interlayer insulating film. The oxide film and the nitride film(7) on the source/drain electrode(5), which is exposed by the contact mask, are etched to expose the source/drain electrode(5) and the thermal oxide film(9) formed on the silicon spacer(8') remains. A conducting line(11) is formed to connect with the source/drain electrode(5).