Laminated substrate fabricated from semiconductor wafers bonded to each other without contact between insulating layer and semiconductor layer and process of fabrication thereof

摘要

An insulating layer is selectively grown on the major surface of a first silicon wafer, and is partially etched away so as to be retracted below the major surface; after the retraction of the insulating layer, the first silicon wafer is bonded to a second silicon wafer, and the major surface of the first silicon wafer is strongly adhered to the major surface of the second silicon wafer, so that the first silicon wafer is hardly separated from the second silicon wafer.