发明名称 Crystal oscillator circuit having transistor with back gate voltage control
摘要 PCT No. PCT/JP98/00240 Sec. 371 Date Jan. 7, 1999 Sec. 102(e) Date Jan. 7, 1999 PCT Filed Jan. 22, 1998 PCT Pub. No. WO98/32218 PCT Pub. Date Jul. 23, 1998An oscillation circuit comprising a control circuit that utilizes the body effect of a substrate bias to control the source potential of a MOSFET that configures a signal inversion amplifier. This control circuit controls the threshold voltage of this MOSFET to be low when power is first applied to the oscillation circuit, and controls the threshold voltage of the MOSFET to be high after the oscillation of the oscillation circuit has stabilized. This makes it possible to ensure that the oscillation circuit oscillates stably and at a low power consumption.
申请公布号 US6097257(A) 申请公布日期 2000.08.01
申请号 US19990155073 申请日期 1999.01.07
申请人 SEIKO EPSON CORPORATION 发明人 KADOWAKI, TADAO;MAKIUCHI, YOSHIKI;NAKAMIYA, SHINJI
分类号 G04F5/06;G04G19/06;G05F1/56;H03B5/04;H03B5/36;H03K3/011;H03K3/03;H03K3/354;(IPC1-7):H03B5/36 主分类号 G04F5/06
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