发明名称 |
SILICON HEAT SHIELD FOR SEMICONDUCTOR ETCHING EQUIPMENT |
摘要 |
PURPOSE: A silicon heat-shield of a high density silicon-etching device is provided to enhance the characteristic of the process for a high density etching by forming an area-extension part on the external surface of a body of the silicon heat shield. CONSTITUTION: On a cylindrical quartz chamber(11), a circle plate-type silicon roof(12) is mounted to open. A coil(13) is wound up on the external side of the quartz chamber(11). On the lower part inside the quartz chamber(11) is electrostatic chuck(15) for holding the wafer(14) is mounted. On the electrostatic chuck(15), the silicon heat shield(16) is formed to induce a uniform etching and to react the fluoro ion.
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申请公布号 |
KR100261568(B1) |
申请公布日期 |
2000.08.01 |
申请号 |
KR19980005132 |
申请日期 |
1998.02.19 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
PARK, BYUNG TAE |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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