发明名称 Chemical vapor deposition apparatus
摘要 An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) includes a material container for containing a liquid CVD source material; a material feeder for feeding the liquid CVD source material from the material container to a vaporizer while keeping the CVD source material liquid; a vaporizer for vaporizing the liquid CVD source material fed from the material feeder by heating the liquid CVD source material to a high temperature to form a CVD source material gas; a reaction chamber connected to the vaporizer by a pipe for forming a thin film on a substrate using the CVD source material gas; and a thermostatic box surrounding the reaction chamber, wherein both of the vaporizer and piping connecting the vaporizer to the reaction chamber are located within the thermostatic box.
申请公布号 US6096133(A) 申请公布日期 2000.08.01
申请号 US20000478362 申请日期 2000.01.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YUUKI, AKIMASA;KAWAHARA, TAKAAKI;MAKITA, TETSURO;YAMAMUKA, MIKIO;ONO, KOICHI;OKUDAIRA, TOMONORI
分类号 C23C16/40;C23C16/448;C23C16/52;C23C16/54;(IPC1-7):C23C16/00 主分类号 C23C16/40
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