Method of crystal growth of a GaN layer over a GaAs substrate

摘要

A method of crystal growth of a GaN layer with an extremely high surface planarity over a GaAs substrate is provided, wherein a GaAs substrate is heated to a temperature in the range of 600 DEG C. to 700 DEG C. without supplying any group-V element including arsenic to form a Ga-rich surface on the GaAs substrate, before a first source material including N and a second source material including Ga are supplied along with a carrier gas onto a surface of the GaAs substrate to form a GaN layer over the GaAs substrate.