Method of fabricating a split gate structure of a flash memory

摘要

On a substrate, there is at least a first split gate and a second split gate. A dielectric layer is then formed on the substrate to cover the first split gate and the second split gate. The dielectric layer is patterned so that the dielectric layer covers at least a portion of the first split gate, a portion of the second split gate and a common source region between the first split gate and the second split gate. A polysilicon layer is formed on the dielectric layer. The polysilicon layer is then patterned.