| 摘要 |
A method for continuously forming a functional deposited film of large area with a microwave plasma-assisted CVD method, characterized by including: continuously moving a strip member in a longitudinal direction, while forming halfway a columnar film formation space with said moving strip member as a side wall; introducing individually at least two or more kinds of source gases for the formation of deposited film having different compositions via a plurality of respective gas supply means into said film formation space; introducing source gases for the formation of deposited film via said gas supply means into said film formation space; at the same time exciting a microwave plasma within said film formation space by radiating or transmitting said microwave energy with microwave applicator means which allows the microwave energy to be radiated or transmitted directionally in one direction perpendicular to a propagating direction of microwave; and forming the deposited film having its composition controlled on a surface of said continuously moving strip member making up said side wall exposed to said microwave plasma.
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