| 摘要 |
In an active matrix type liquid-crystal display apparatus using polycrystal silicon as semiconductor devices of switching elements, leakage current of the switching elements is prevented, large driving current is achieved, and rise characteristics of current in the sub-threshold region are improved, thereby realizing high-pixel-number and high-definition image display. For this, a surface of an insulating layer of silicon nitride film 102 is oxidized to form an insulating layer of silicon oxide film 111 surface roughness of which is 2 nm or less, and a polycrystal silicon layer is formed thereon to form TFTs.
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