发明名称 |
METHOD FOR REGENERATING QUARTZ CHAMBER OF SEMICONDUCTOR |
摘要 |
PURPOSE: A method of reproducing a semiconductor quartz chamber is provided to reduce the cost by recycling the expensive quartz chamber and also extend the cycle for replacing with a quartz chamber. CONSTITUTION: A hemispherical quartz chamber(20) whose abrasion amount is beyond a predetermined level is clipped to a shelf to spin at a low speed. By contacting a quartz welding rod(21) to the internal wall of the worn-out quartz chamber(20a), the wall is filled with quartz melted evenly by a rotation-welding in a predetermined thickness. After cooling the chamber(20a), the chamber is lapped to have the same size as other normal chamber using a lapping tool. The chamber(20a) is annealed to release the heat stress.
|
申请公布号 |
KR100259355(B1) |
申请公布日期 |
2000.08.01 |
申请号 |
KR19980003400 |
申请日期 |
1998.02.06 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
KIM, UNG SOO |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|