| 摘要 |
PURPOSE: A semiconductor wafer plasma etching apparatus is provided to effectively etch the semiconductor wafer by making plasma formed in the chamber concentrate on the semiconductor wafer to a probe installed on the wafer stage to have negative power applied. CONSTITUTION: In the plasma etching apparatus, a closed chamber(11) of a certain size is formed. Under the chamber, a semiconductor wafer to be etched is fixed as well as a wafer stage(12), an electrode where BIAS power is applied. On the chamber(11), there are a gas spray plate(14) and a coil(15) where SOURCE power is applied. On the wafer stage(12) in the chamber(11), a probe(16) where negative power is applied is formed to thereby concentrate the plasma on the semiconductor wafer fixed to the wafer stage(12).
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