发明名称 |
Method of and apparatus for producing single-crystalline diamond of large size |
摘要 |
An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.
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申请公布号 |
US6096129(A) |
申请公布日期 |
2000.08.01 |
申请号 |
US19980060555 |
申请日期 |
1998.04.15 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SAITO, HIROHISA;TSUNO, TAKASHI;IMAI, TAKAHIRO;KUMAZAWA, YOSHIAKI |
分类号 |
C30B25/00;C30B25/02;C30B25/10;C30B29/04;H01L21/205;(IPC1-7):C30B23/04 |
主分类号 |
C30B25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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