Insulated gate semiconductor device

摘要

An insulated gate semiconductor device (10) has a double spacer gate structure (45). To form the gate structure (45), a stack having sidewalls (22) is formed over a major surface (12) of a semiconductor substrate (11). A gate oxide (23) is then formed over the major surface (12) adjacent the sidewalls (22). A first polysilicon layer (24) is deposited on the gate oxide (23) and the stack. The first polysilicon layer (24) is etched to form a first conductive spacer (32) of the gate structure (45). A second polysilicon layer (44) is deposited on first spacer (32) and the stack. The second polysilicon layer (44) is then etched to form a second conductive spacer (46) of the gate structure (45). Because the double spacer gate structure (45) is formed without relying on photolithographic techniques, its size is smaller than the size of a gate structure formed using conventional photolithography.