OPEN DRAIN INPUT/OUTPUT STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THEREOF

摘要

PURPOSE: A structure of an open drain input/output terminal of a semiconductor device and a fabrication method thereof are provided, which can be applied to a MASKROM embedded MCU and an EPROM embedded MCU without additional process after forming a gate, by forming a gate line width of an enhancement transistor connected to an input/output pad larger than an impurity implanted region formed on a channel region. CONSTITUTION: In an enhancement transistor, a gate insulation film(34) is formed on an active region(F) on a P-type semiconductor substrate(30) comprising a field oxide(32), and a gate(36) of W-silicide(36b)/polysilicon(36a) stacked structure is formed on a part of the gate insulation film. A spacer(38) of insulation film is formed on both side walls of the gate. And, an N-type source/drain region(42a,42b) comprising an LDD(Lightly Doped Drain)(40) is formed in the substrate on the right and left side of the gate. And, an N-type impurity implanted region(44) is formed on a channel region below the gate so that the region is connected with the source region in a body and is separated from the drain region.