发明名称 GEOMETRIES AND CONFIGURATIONS FOR MAGNETRON SPUTTERING APPARATUS
摘要 A thin film coating system incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated deposition and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.
申请公布号 CA2029755(C) 申请公布日期 2000.08.01
申请号 CA19902029755 申请日期 1990.11.13
申请人 发明人 SEESER, JAMES W.;ALLEN, THOMAS H.;TEMPLE, MICHAEL D.;DICKEY, ERIC R.;HICHWA, BRYANT P.;VAN HORN, CRAIG C.;WENTWORTH, PATRICK R.;ILLSLEY, ROLF F.;KLINGER, ROBERT E.;LEFEBVRE, PAUL M.;SCOBEY, MICHAEL A.;SEDDON, RICHARD I.;SOBERANIS, DAVID L.
分类号 C23C14/35;C23C14/00;C23C14/08;C23C14/10;C23C14/34;C23C14/50;C23C14/56;C23C14/58;(IPC1-7):C23C14/56;H01J37/34 主分类号 C23C14/35
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