METHOD OF FILLING CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for burying the contact hole of a semiconductor device is provided to increase adhesive strength between conducting layers and decrease the contact resistance by burying fully the contact hole in the process for forming metal wire. CONSTITUTION: After forming an oxide film(14) on a silicon substrate(11), the first contact hole and the second contact hole are formed on the silicon substrate(14) by etching the oxide film(14) selectively. The first titanium/titanium nitride layer(15) is formed on the whole structure including the contact holes by a chemical depositing vapor method. A tungsten layer is formed on the first titanium/titanium nitride layer(15). The tungsten layer is etched by a stop on titanium nitride etching method so as to form a tungsten plug(16A). A cavity is formed on the entrance of the contact holes by etching the tungsten layer. After the tungsten plug(16A) and the oxide film(14) are etched, an aluminum layer(20) is formed on the whole structure.