发明名称 Semiconductor apparatus having an insulating layer of varying height therein
摘要 A semiconductor apparatus includes a semiconductor integrated circuit including a conductive pattern; an insulating layer which is formed on the semiconductor integrated circuit to form a plurality of base members having uneven heights; an opening which is formed through the insulating layer to expose a part of the conductive pattern; and a conductive layer which is formed on the insulating layer and the opening, the conductive layer is extending from the exposed portion of the conductive pattern to the top surface of the highest base member. An electrode is composed of the insulating layer, the opening and the conductive layer.
申请公布号 US6097091(A) 申请公布日期 2000.08.01
申请号 US19970959667 申请日期 1997.10.29
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 OHSUMI, TAKASHI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/485;(IPC1-7):H01L23/48;H01L29/40 主分类号 H01L23/52
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