发明名称 |
DRY ETCHING APPARATUS |
摘要 |
PURPOSE: A dry-etching device is provided to increase the yield of the dry etching process by preventing from a micro arcing and the polluted particles generated during the etching process by distributing the plasma only on the wafer. CONSTITUTION: On the lower part of the dry etching device, there is a chuck(112) on which the wafer is loaded. A metal ring(114b) is formed around the chuck to make the density of the plasma uniform. A cathode(122) is mounted on the upper part of the dry etching device to face against the chuck at a predetermined distance. A restriction ring(124) is formed to support the cathode, protruding under the cathode. A screw(126) is mounted in the restriction ring to be fixed to the upper part of the dry etching device to be at a maximal distance from the restriction ring in the scope of maintaining the holding power.
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申请公布号 |
KR100258984(B1) |
申请公布日期 |
2000.08.01 |
申请号 |
KR19970073532 |
申请日期 |
1997.12.24 |
申请人 |
SAMSUNG ELECTRONICS CO.,LTD. |
发明人 |
KIM, HAK PHIL;KIM, TAE RYUNG;LEE, YOUNG WOO |
分类号 |
C23F4/00;C23F1/02;H01L21/302;H01L21/306;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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