| 摘要 |
A TFT using a low-temperature poly silicon thin film as an active layer is formed on a TFT substrate, and a plurality of pixel electrodes made of a reflection material such as Al are formed on the TFT and an electrode wiring through an interlayer insulator film to cover the TFT and the electrode wiring. A liquid crystal layer has a vertical alignment, and a fluorine based liquid crystal molecule having a negative dielectric anisotropy and at least fluorine on a side chain is used as a liquid crystal material. A product DELTA n xd of a birefringence DELTA n of the liquid crystal layer and a thickness d of the liquid crystal layer is set equal to or less than 0.30 so that an excellent voltage-transmittance characteristic can be obtained. Thus, the liquid crystal layer can be fully operated by low-voltage driving which is realized by a poly silicon TFT.
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