Method of controlling effective channel length of semiconductor device by non-doping implantation at elevated energies

摘要

A semiconductor device and a method of manufacturing a semiconductor device with an effective channel length that is less than the physical gate length avoids requiring improving the masking, lithography and etching process steps by increasing the implantation energy of a pre-amorphizing implant. The pre-amorphizing implant is performed after the doping of the source and drain areas and after activation of the dopants. The implantation energy is sufficient to introduce damage into the substrate to allow for increased movement of the dopants in the substrate. Subsequent annealing steps performed during silicidation cause the source and drain areas to expand toward each other and reduce the effective channel length. This channel length reduction leads to improved device performance through higher Idsat, etc.