| 摘要 |
PURPOSE: A method for forming a conductive layer of a semiconductor device is provided to improve the electrical characteristics and the reliability of the device, by preventing lifting phenomenon of a tungsten silicide layer. CONSTITUTION: A polysilicon layer(13) as thick as 1000 angstrom is deposited on a silicon substrate(11) where an insulation film(12) is formed. Then, a silicon film(14) is formed on an upper surface of the polysilicon layer to improve the adhesion between the polysilicon layer and a tungsten silicide(15). Also, the silicon film prevent the diffusion of WF6 gas in the following process, and constitutes a seed for forming a tungsten nucleus. Then, the tungsten silicide layer is formed on an upper surface of the silicon film with a low temperature and a low pressure chemical vapor deposition method. Then, a metal interconnection is formed by patterning the tungsten silicide and the silicon film and the polysilicon layer. Then, a BPSG film(16) for planarization is formed by a high pressure chemical vapor deposition. After than, a thermal annealing is performed so that the BPSG film acts as a planarization and a buffer layer.
|
