DRY ETCHING METHOD FOR MULTILAYER FILM

摘要

PURPOSE: A method of dry etching a multi-level layer is provided to enhance the reliability of the semiconductor device by anisotropy-etching the upper layer of titanium silicide with Cl2/N2 gas and etching the lower layer of polysilicon with Cl2/O2. CONSTITUTION: In the chamber whose one side electrode has SOURCE voltage applied and the other side electrode has BIAS voltage applied, the semiconductor substrate(1) having a silicon oxidation layer(2), polysilicon layer(3a) and titanium silicide layer(4a) deposited successively is provided. Using the plasma including Cl2/N2 gas, the titanium silicide layer(4a) is anisotropically etched. Using the plasma including Cl2/O2 gas, the polysilicon layer(3a) is anisotropically etched.