| 摘要 |
A compound semiconductor device is manufactured by forming a carbon-doped compound semiconductor device at a predetermined growth temperature on a compound semiconductor substrate, stopping the growth and changing the growth temperature of the compound semiconductor layer, including the carbon-doped compound semiconductor layer, to a predetermined temperature under an atmosphere comprising an alkylarsine, thereby avoiding the formation of free atomic hydrogen and preventing hydrogen contamination of the C-doped compound semiconductor layer. As a result, the amount of coupling between hydrogen and carbon in the carbon-doped compound semiconductor layer is significantly reduced, thereby preventing lowering of the carbon carrier concentration. The present method enables formation of a C-doped GaAs base layer without deterioration of electrical characteristics, and formation of a laser having a second clad layer of C-doped compound semiconductor layer with improved reliability.
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