发明名称 |
Thin film transistor having a continuous crystallized layer including the channel and portions of source and drain regions |
摘要 |
A transistor includes an MILC (metal-induced lateral crystallization) region formed on a substrate with a semiconductor material and including a channel region, and a plurality of MIC (metal-induced crystallization) regions formed on the sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region. A method of fabricating a transistor includes the steps of forming an MILC (metal-induced lateral crystallization) region on a substrate using a semiconductor material, the MILC region including a channel region, and forming a plurality of MIC (metal-induced crystallization) regions formed on sides of the MILC region using a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region.
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申请公布号 |
US6097037(A) |
申请公布日期 |
2000.08.01 |
申请号 |
US19980074606 |
申请日期 |
1998.05.08 |
申请人 |
JOO, SEUNG-KI;IHN, TAE-HYUNG |
发明人 |
JOO, SEUNG-KI;IHN, TAE-HYUNG |
分类号 |
H01L21/20;H01L21/336;(IPC1-7):H01L31/036 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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