发明名称 |
Gapfill of semiconductor structure using doped silicate glasses |
摘要 |
Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth.
|
申请公布号 |
US6096654(A) |
申请公布日期 |
2000.08.01 |
申请号 |
US19970942273 |
申请日期 |
1997.09.30 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KIRCHHOFF, MARKUS M.;ILG, MATTHIAS |
分类号 |
H01L21/316;H01L21/762;H01L21/768;H01L23/522;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|