发明名称 |
MULTI-WRITE APPARATUS OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A multi writer of a semiconductor memory is provided to apply power on a test pad and perform write operation with response to the voltage level of an output of a multi-bit write signal generator coupled with the test pad so as to reduce test cost. CONSTITUTION: The multi writer of the semiconductor memory includes a test pad, a multi-bit write signal generator, a multi-bit write controller. The test pad receives the power so as to recognize the multi-bit write operation. The multi-bit write signal generator generates the multi-bit write signal with response to the voltage level applied on the test pad. The multi-bit write controller performs the multi-bit write operation under the control of the multi-bit write signal. The multi-bit write controller further includes a data bus select signal generator(30), a multi-write controller(40) and a write data select signal generator(50). The data bus select signal generator operates under a predetermined address signal. The multi-write controller combines the data bus select signal and the multi-bit write signal to generate a predetermined output voltage. The write data select signal generator combines the output voltage and a write enable signal to generate a write data select signal.
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申请公布号 |
KR100263240(B1) |
申请公布日期 |
2000.08.01 |
申请号 |
KR19970017500 |
申请日期 |
1997.05.07 |
申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
JUNG, DONG-SIK;LEE, MYOUNG-DON |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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