发明名称 MULTI-WRITE APPARATUS OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A multi writer of a semiconductor memory is provided to apply power on a test pad and perform write operation with response to the voltage level of an output of a multi-bit write signal generator coupled with the test pad so as to reduce test cost. CONSTITUTION: The multi writer of the semiconductor memory includes a test pad, a multi-bit write signal generator, a multi-bit write controller. The test pad receives the power so as to recognize the multi-bit write operation. The multi-bit write signal generator generates the multi-bit write signal with response to the voltage level applied on the test pad. The multi-bit write controller performs the multi-bit write operation under the control of the multi-bit write signal. The multi-bit write controller further includes a data bus select signal generator(30), a multi-write controller(40) and a write data select signal generator(50). The data bus select signal generator operates under a predetermined address signal. The multi-write controller combines the data bus select signal and the multi-bit write signal to generate a predetermined output voltage. The write data select signal generator combines the output voltage and a write enable signal to generate a write data select signal.
申请公布号 KR100263240(B1) 申请公布日期 2000.08.01
申请号 KR19970017500 申请日期 1997.05.07
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 JUNG, DONG-SIK;LEE, MYOUNG-DON
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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