发明名称 Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad
摘要 A semiconductor light emitting device includes an insulating substrate; and a layered structure formed on the insulating substrate, the layered structure including at least a light emitting section, a positive electrode section, and a negative electrode section. A portion of the positive electrode section and a portion of the negative electrode section overlap each other via an insulating film.
申请公布号 US6097040(A) 申请公布日期 2000.08.01
申请号 US19980115756 申请日期 1998.07.15
申请人 SHARP KABUSHIKI KAISHA 发明人 MORIMOTO, TAIJI;ITO, SHIGETOSHI
分类号 H01L33/32;H01L33/38;H01L33/42;H01L33/44;H01L33/62;(IPC1-7):H01L33/00 主分类号 H01L33/32
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