| 摘要 |
PURPOSE: A method for processing the photoresist of a semiconductor device is provided to prevent the photoresist from popping in the ion injecting by applying heat to the upper surface and the lower surface of a wafer simultaneously with a luminous body such as a UV lamp so as to harden the photoresist deposited on the wafer. CONSTITUTION: A wafer(20) on which a photoresist is deposited is set on a hot plate(10), and a luminous body(40) is placed on the wafer(20). The temperature of the hot plate(10) is changed to heat the lower surface of the wafer(20), and the upper surface of the wafer(10) is heated by irradiating the light of the luminous body(40) at the same time, so that the photoresist is converted to a carbonized layer. Impurities are injected into the converted photoresist, and the photoresist is removed.
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