发明名称 Synchronous memory with programmable read latency
摘要 The present invention is directed to a logic circuit for controlling the read latency time of a memory circuit. The logic circuit includes a first circuit for producing a plurality of values derived from a read enable signal. Each of the values represents the read enable signal delayed by a predetermined period of time. The logic circuit also includes a second circuit for selecting one of the plurality of values in response to at least one control signal. The selected value enables a read operation of the memory circuit. A method for controlling the read latency time of a memory circuit is also presented.
申请公布号 US6097667(A) 申请公布日期 2000.08.01
申请号 US19990443874 申请日期 1999.11.19
申请人 MICRON TECHNOLOGY, INC. 发明人 PAWLOWSKI, J. THOMAS
分类号 G11C7/10;G11C7/22;(IPC1-7):G11C8/00 主分类号 G11C7/10
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