发明名称 |
Method of manufacturing thin film transistor |
摘要 |
A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a side wall and a gate insulation layer. An intermediate layer is provided between the side wall and the gate insulation layer. The intermediate layer is different in layer property from the side wall. When the side wall is formed by an anisotropic etching process, the etching can be stopped on the surface of intermediate layer. As a result, the gate insulation layer and the substrate are protected against the etching.
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申请公布号 |
US6096585(A) |
申请公布日期 |
2000.08.01 |
申请号 |
US19970980797 |
申请日期 |
1997.12.01 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUDA, KAICHI;UEMOTO, TSUTOMU;HIRAYAMA, HIDEO;KAWAMURA, SHINICHI;TORIYAMA, SHIGETAKA |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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