Method of making high-density, high-purity tungsten sputter targets

摘要

A method is provided for fabricating tungsten sputter targets having a density of at least about 97% of theoretical density and an oxygen content of at least about 100 ppm less than the starting powder. According to the principles of the present invention, a tungsten powder having a powder size less than about 50 mum and an oxygen content less than about 500 ppm is hot-isostatic pressed at a temperature of about 1200° C. to about 1600° C. and a pressure of at least about 15 ksi for at least about 3 hours. A high-purity sputter target is further achieved by using a tungsten starting powder having a purity higher than about 99.999%.