| 摘要 |
PROBLEM TO BE SOLVED: To improve utilization of an element and aim at cost reduction and miniaturization by equalizing share of current for each element uniform. SOLUTION: In this conversion device in each module type semiconductor element 201 are formed a planar beam lead 50 which connects electrically a penetrating part 26a of an envelope 26 with an IGBT chip 24 of a reference which is most distant from the penetrating part, and bypass parts 52a, 52b which connect the beam lead with IGBT chips 24a, 24b which are out of reference are formed. The bypass parts 52a, 52b branch from branching parts 51a, 51b, so as to have substantially the same inductance as a closed circuit which reaches the IGBT chips 24a, 24b which are out of reference from the branching parts 51a, 51b of the beam lead positioned above the out-of-reference IGBT chips, passing the IGBT chip 24s of reference. Thereby the inductances between the IGBT chips 24s, 24a, 24b are adjusted to be substantially identical in this power converting device. |
