SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To realize a structure for a semiconductor device having a storage node that has higher integrity and a superior power-saving characteristic and is suited to low-cost and high-yield production. SOLUTION: A plurality of transfer gates 34 are formed on a silicon substrate 32. An interlayer film 44 is provided to cover the transfer gates 34. A hollow node 48 is formed thereon using a conductive material. A contact hole 46 is made penetrating the interlayer film 44, without exposing the transfer gate 34 to expose the surface of the silicon substrate 32 over the inside of the hollow node 48. A conductive layer 40 is formed to cover the inner surface of the contact hole 46 to a specified film thickness in a region between the inner surface of the hollow node 48 and the exposed part of the silicon substrate 32.