FABRICATION OF SEMICONDUCTOR STRUCTURE HAVING SELF- ALIGNED SPACER

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an improved self-aligned spacer. SOLUTION: A conductive gate structure is provided on a semiconductor substrate 1 and a first dielectric gate cap material layer and a second dielectric material layer 5 are provided thereon. Subsequently, a region 6 of high dopant level is provided on the second dielectric material layer 5 for fabricating a self-aligned spacer. Selective etching takes place through the dopant and a self-aligned conductive spacer is defined.