SEMICONDUCTOR DEVICE, LIQUID CYSTAL DISPLAY DEVICE, AND THEIR MANUFACTURING

摘要

PROBLEM TO BE SOLVED: To provide a high performance TFT, comprising a polycrystalline film of unidirectional crystal grain orientation and less impurity at grain boundary, with the particle size of the polycrystalline film larger than the channel length of a transistor, while the size is single crystal at a channel part. SOLUTION: A first a-Si film 11 is formed on a substrate 3, on which a metal film 14 is formed as a base material film, an opening 15 corresponding to a TFT region to be formed is formed at the metallic film 14, then thermal annealing is performed at 600 deg.C or below using MIC and MILC, so that the a-Si film 11 under the metallic film 14 is changed to a p-Si film 16, while the metallic film 14 is absorbed into the p-Si film 16, a crystal grain is allowed to grow laterally to form a crystal grain 17 of large particle size, and the a-Si film 18 is irradiated with excimer laser to make it polycrystalline.