| 发明名称 |
SILICON-ON-INSULATOR SUBSTRATE WITH PATTERN HAVING SELF- MATCHED TRENCH AND ITS MANUFACTURE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an SOI layer with a pattern wherein no transition region containing many defects is formed. SOLUTION: A flat silicon-on-insulator(SOI) substrate having no transition defect containing an SOI region with a pattern and a bulk area is formed. This method contains a stage of removing transition defects by forming a self- matched trench 30 adjacent to the SOI area 22 between the SOI region and the bulk region 24.
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| 申请公布号 |
JP2000208746(A) |
申请公布日期 |
2000.07.28 |
| 申请号 |
JP19990373004 |
申请日期 |
1999.12.28 |
| 申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
AJMERA ATUL;DEVENDORA K SADANA;DOMINIK J SHEPISU |
| 分类号 |
H01L21/02;H01L21/265;H01L21/266;H01L21/308;H01L21/76;H01L21/762;H01L27/12;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/02 |
| 代理机构 |
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