| 摘要 |
PROBLEM TO BE SOLVED: To reduce the production processes of a semiconductor device for forming a contact hole by coating the upper surface and side surface of a gate electrode with a protecting film. SOLUTION: An upper active region electrode 8a and an upper field region electrode 8f coating the upper surface and side surface thereof with an SiN protecting film are formed. Continuously, a protective film 6 covering the upper surface of the upper field region electrode 8f is selectively removed. Afterwards, an inter-layer insulating film is formed and a contact hole on an active region and a contact hole on a field region are opened simultaneously.
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