| 摘要 |
PROBLEM TO BE SOLVED: To excellently measure a plasma characteristic of a plasma processing device by applying high frequency voltage on respective plural probes via respective electric circuits composed of an electric element. SOLUTION: Probes 11 are almost uniformly embedded in a plane via an insulating bush 10 in a measuring electrode 9. An electrode 12 is insulated by an insulating ring 13, and a high frequency power source 15 is connected via a matching unit 14 to apply high frequench voltage. The high frequency voltage impressed on the electrode 12 and a flowing electric current are monitored on the waveform. The electrode 12 and the respective probes 11 are connected via an inductor 16, a capacitor 17 and a resistance 18, the high frequency voltage is also applied on the respective probes 11, and this voltage and a flowing electric current are monitored on the waveform to thereby measure the in-plane distribution of the high frequency voltage influencing the plasma characteristic distribution and the energy distribution of an ion incident on a wafer to obtain the optimal etching characteristic.
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