| 摘要 |
PROBLEM TO BE SOLVED: To prevent the dielectric constant of a ferroelectric thin film from dropping and the leakage current of the thin film from increasing by making the composition of the formerly disposed layer of the thin film equal to the stoichiometric composition of a perovskite type ferroelectric substance of the same type as that of the main layer of the thin film. SOLUTION: The formation of a formerly disposed layer 53 ends when a period of time T2 elapses after material vapor, PB(DPM)2, is introduced to a reactor 10 after a prescribed period of time elapses in a state where material vapor, Ti(O-i-C3H7)4, and O2 are introduced to the reactor 10 in a pre-film forming process and opening valves 16d and 16e are opened while the pressure in the reactor 10 is maintained constantly by means of an exhaust speed regulator 19. The formation of a successively formed main layer 54 ends when a substrate 11 is taken out from the reactor 10 after the inside of the reactor 10 is returned to the atmospheric pressure in a state where a lead titanate zirconate film is formed by supplying material vapor, Zr(O-t-C4H9)4, to the reactor 10 while opening valves 16a, 16d, and 16e are opened. Therefore, even when a ferroelectric film is formed thin, the lowering of the dielectric constant of the ferroelectric thin film can be prevented. |
