| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein a joint leak caused by the crystal defect of a semiconductor substrate is suppressed, even when a contact of a one-side-elongated square shape is formed for lower resistance of the contact. SOLUTION: A process where a field effect transistor is formed on a substrate 1, a process where an insulating film 11 is formed on the field effect transistor, a process where a first thermal process which is at relatively high temperature and short period is performed, a process where an opening 12 which reaches the field effect transistor is formed at the insulating film, a process where a second thermal process which is relatively low temperature and long period is performed, and a process where a conductor is embedded in the opening, are provided.
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