发明名称 PATTERN FORMING METHOD AND PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To ensure high transmittance to far UV or other active actinic radiation, dry etching resistance, high sensitivity and good aqueous alkali developability by incorporating a specified aqueous alkali-soluble resin, a compound which generates an acid when irradiated with active actinic radiation, a compound which reduces the solubility of a coating film by an acid catalyzed reaction and a specified ionic dissociable compound. SOLUTION: A patter forming material to be used contains an aqueous alkali- soluble resin having cyclic hydrocarbon groups, alcoholic hydroxyl groups and carboxylic acid groups in a side chain, a compound which generates an acid when irradiated with active actinic radiation, a compound having reactivity by which the solubility of a coating film to an aqueous alkali solution is reduced by an acid catalyzed reaction and an ionic dissociable compound of the formula or the like. In the aqueous alkali-soluble resin, carboxylic acid groups occupy 20 to <50% of the total number of the functional groups of the side chain. In the formula, R1-R4 are each H, 1-7C alkyl or aryl and Y1 is Cl, Br, I or the like.
申请公布号 JP2000206679(A) 申请公布日期 2000.07.28
申请号 JP19990002578 申请日期 1999.01.08
申请人 HITACHI LTD 发明人 TSUCHIYA HIROKO;HATTORI KOJI;SHIRAISHI HIROSHI
分类号 H01L21/027;G03F7/004;G03F7/038;G03F7/039 主分类号 H01L21/027
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