| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electron emitting element, capable of stabilizing the emission of electrons, thereby improving emission characteristics, and capable of preventing gate leak. SOLUTION: In this manufacturing method of an electron emitting element having an emitter 1 with an end part 1b emitting electrons, a tungsten silicide film 3 (gate electrode) for electric field placement, and a silicon oxide film 2 (insulation layer) between the emitter 1 and the tungsten silicide film 3, the element is heat-treated above 800 deg.C in a vacuum having a pressure of 10-8 Torr or less, after the emitter 1 is formed thereon and before a wafer is diced.</p> |
