发明名称 |
SEMICONDUCTOR DYNAMIC QUANTITY SENSOR AND ITS MANUFACTURE |
摘要 |
PROBLEM TO BE SOLVED: To prevent the adhesion between movable electrodes and fixed electrodes due to an electrostatic force generated by handling in a semiconductor acceleration sensor, in which the movable electrodes and the fixed electrodes opposing to the movable electrodes are formed by forming grooves in the semiconductor layer of a semiconductor substrate. SOLUTION: The sensor part 101 of the acceleration sensor 100 comprises a movable part 2 and fixed electrodes 3b and 4b. The movable part 2 is formed of a weight part 6 supported by a first semiconductor layer 1a to be displaced according to the impression of acceleration, and movable electrodes 9a and 9b integrally formed in the weight part 6. The fixed electrodes 3b and 4b comprises detecting surfaces opposing to the detecting surfaces of the movable electrodes 9a and 9b and are supported by the first semiconductor layer 1a. A handling part 102 which comes into contact by handling is provided in the periphery of the sensor part 101 via a groove 103, and both parts 101 and 102 are electrically insulated by the groove 103. |
申请公布号 |
JP2000206142(A) |
申请公布日期 |
2000.07.28 |
申请号 |
JP19990262319 |
申请日期 |
1999.09.16 |
申请人 |
DENSO CORP |
发明人 |
SAKAI MINEICHI;TAKEUCHI YUKIHIRO;TOYODA INEO;ISHIO SEIICHIRO;YAMAMOTO TOSHIMASA;KAWASAKI EIJI;MURATA MINORU;MUTO KOJI |
分类号 |
B81B3/00;B81C1/00;G01P15/08;G01P15/125;H01L29/84;(IPC1-7):G01P15/125 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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