| 摘要 |
PROBLEM TO BE SOLVED: To increase the capacitance per occupying area of an electrode composed of a conductive material by installing a pseudo-Φ type capacity electrode at a prescribed interval from a first interlayer insulating film formed on a semiconductor substrate. SOLUTION: A pseudo-Φ type capacity electrode is composed of a cylinder section 110 having a first conductive material layer 10 formed at a prescribed interval from a first interlayer insulating film 2 formed on a substrate 1, a fourth conductive material layer 17 which is formed in such a way that the layer 17 comes into contact with the lower sections of both side faces of the first conductive material layer 10, and a third conductive material layer 16 which is formed in parallel with the first conductive material layer 10 at a prescribed interval from the layer 10 so that the layer 16 may come into contact with the upper sections of both side faces of the fourth conductive material layer 17. The capacity electrode is also provided with a second conductive material layer 14 which is formed on the substrate 1 composed of a semiconductor substrate, etc., in such a way that the front end of the layer 14 is pierced toward the inside of the cylinder section 110. Therefore, the capacitance per occupying area of the capacity electrode can be increased. |
