| 摘要 |
PROBLEM TO BE SOLVED: To operate a split gate cell at a low voltage by forming a conductive layer on a tunnel oxide on a silicon substrate surface, with a space provided in the conductive layer, and forming a heavily-doped region in the substrate under the space between electrodes, so that a second control gate is formed on a dielectric layer. SOLUTION: A split gate cell has a tunnel oxide layer in a part of the surface of a silicon substrate with a space provided between them. On the tunnel oxide layer, a first control gate CG-1 and floating gate electrode FG of the same deposit or growth layer are formed. A dielectric layer is stacked over the first control gate CG-1 and floating gate electrode FG. A second control gate CG-2 which is physically separated from the first control gate CG-1, is provided in the space between the first control gate CG-1 and the floating gate electrode FG on the dielectric layer, forming a heavily-doped region, so that low-voltage operation is allowed.
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